From left: Professor Choi WooYoung, Department of Electrical and Computer Engineering, Seoul National University; Jinwook Lee, Geuntae Park, and Minjeong Ryu Ph.D. candidates.

 
From left: Covers of the December 2024 and February 2025 issues of IEEE Electron Device Letters

Two papers by the research team from the Three-Dimensional Integration & Device Lab (TIDL), led by Professor Wooyoung Choi, and authored by “Jinwook Lee, Geuntae Park, Myoungsoo Shin”, and  “Minjeong Ryu, and Jaeseung Woo”, have been selected as the cover articles for the December 2024 and February 2025 issues of IEEE Electron Device Letters (EDL).

Founded in 1980, EDL is one of the most influential academic journals worldwide, covering innovative and significant contributions to semiconductor devices, covering domains on theories, modeling, design, performance, and reliability.

The specific contents of the two papers selected for the cover of the respective EDL issues are as follows:

December 2024 issue [Jinwook Lee/Geuntae Park, co-first authors]: Proposes and implements a new torsional via structure for a nanoelectromechanical memory switch integrated onto a CMOS interconnect layer in a three dimensional fashion, achieving the world's highest reliability (funded by the Ministry of Science and ICT’s Next-Generation Intelligent Semiconductor Foundation).

February 2025 issue [Minjeong Ryu, first author]: By leveraging  local ferroelectric polarization transitions, a single transistor is utilized to implement the world’s first ternary-content-addressable memory that achieves high search accuracy and large-scale arrays (funded by the Samsung Science &Technology Foundation Program).

Source: https://ece.snu.ac.kr/ece/news?md=v&bbsidx=56018
Translated by: Dohyung Kim, English Editor of the Department of Electrical and Computer Engineering, kimdohyung@snu.ac.kr