Seungwan Jeung, an M.S.-Ph.D. integrated candidate from the Semiconductor package Module EE Technology Lab (Advisor: Professor Sang Won Yoon), and Dong Beom Seo, an M.S.-Ph.D. integrated candidate from the Laboratory of Emerging Electronics & optoElectronics (Advisor: Professor Chul-Ho Lee) in the Department of Electrical and Computer Engineering at Seoul National University, won the Outstanding Presentation Award and the Outstanding Poster Award, respectively, at the 2026 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2026). The event was held at the Asti Hotel in Busan from July 12th to 14th.

Jeung gave a presentation titled, “Simulation Analysis of Triple-Point Electric-Field Concentration and Mitigation via Localized Coating in High-Voltage SiC Power Modules.” In this study, 3D electrostatic simulations were utilized to analyze the electric field concentration phenomenon occurring at the triple point—where the metal layer, ceramic, and insulating material meet—within high-voltage SiC power modules. Additionally, a localized coating was applied to the areas where the electric field concentrates, and the field mitigation effect was confirmed by comparing the electric field distribution before and after the coating. This research is highly significant as it proposes a practical design direction to mitigate the risks of partial discharge and insulation degradation, which increase with higher voltages, thereby improving the insulation reliability of high-voltage SiC power modules.

Seo presented a poster titled, “Work Function Tunable Antimony Alloys for Pinning-free Contact in Two-dimensional Transistors.” Addressing the Fermi-level pinning problem at the metal-semiconductor junction—which is a critical bottleneck for 2D semiconductors, a promising next-generation material—he proposed a novel framework utilizing antimony alloy contacts. Through this approach, the research successfully reached the Schottky-Mott limit and realized high-gain inverters alongside world-class low-resistance contacts. This breakthrough is expected to be utilized in highly integrated CMOS logic based on 2D semiconductors in the future.

AWAD, marking its 33rd anniversary this year, is an international workshop in the field of semiconductor devices and materials that has been held alternately in Korea and Japan since 1993. The workshop features a broad spectrum of the latest research achievements in the semiconductor field, ranging from fundamental semiconductor physics and new material research to device structures, manufacturing processes, simulations, integrated circuits, and advanced packaging technologies. Moreover, it has established itself as a premier venue for researchers from diverse fields to discuss the future direction and key research challenges of next-generation semiconductor technologies, fostering expanded academic exchange and cooperation across borders and disciplines.

Source: https://ece.snu.ac.kr/ece/news?md=v&bbsidx=57966

Translated by: Changhoon Kang, English Editor of the Department of Electrical and Computer Engineering, changhoon27@snu.ac.kr