A paper by researcher Sung-Ho Park from Professor Jong-Ho Lee’s research team in the Department of Electrical and Computer Engineering of Seoul National University has been selected as the cover article for the November 2026 issue (issue 61) of Advanced Science (IF: 14.1), a world-renowned scientific journal.

This research proposes a novel Triple-Level Content-Addressable Memory (TLCAM) architecture that directly compares the stored data with input data in parallel inside the memory, utilizing eight data states per cell of the commercial three-dimensional NAND flash memory. Compared to the sequential read approach of the conventional NAND flash memory, it increases the read throughput by up to 24 times and reduces the read energy for searching by approximately 98%.

As three-dimensional NAND flash memory is a representative nonvolatile memory with high integration density and solid commercial viability, this research is expected to significantly contribute to the advancement of high-performance memory-centric computing technologies for accelerating large-scale data searches and enabling low-power artificial intelligence computation.

Paper Title: Triple-Level Content-Addressable Vertical NAND Flash Memory (https://doi.org/10.1002/advs.77390)

Source: https://ece.snu.ac.kr/ece/news?md=v&bbsidx=58028

Translated by: JungHwan Kim, English Editor of the Department of Electrical and Computer Engineering, onzdavid@snu.ac.kr