일 시: 2018년 4월 10일 화요일 13:30~14:30

장 소: 서울대학교 반도체공동연구소 설계연구관 도연홀

연 사: Meyya Meyyappan(NASA Ames Research Center)

주 최: IEEE EDS Seoul Chapter

후 원: 반도체공동연구소, 창의정보기술 인재양성사업단

Biography
     Meyya Meyyappan is Chief Scientist for Exploration Technology at NASA Ames Research Center in Moffett Field, CA. Until June 2006, he served as the Director of the Center for Nanotechnology. He is a founding member of the Interagency Working Group on Nanotechnology (IWGN) established by the Office of Science and Technology Policy (OSTP). The IWGN is responsible for putting together the National Nanotechnology Initiative.

     Dr. Meyyappan has authored or co-authored over 370 articles in peer-reviewed journals and made over 250 Invited/Keynote/Plenary Talks in nanotechnology subjects across the world and over 250 seminars at universities. His research interests include carbon nanotubes, graphene, and various inorganic nanowires, their growth and characterization, and application development in chemical and biosensors, instrumentation, electronics and optoelectronics.

     Dr. Meyyappan is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), Electrochemical Society (ECS), American Vacuum Society (AVS), Materials Research Society (MRS), Institute of Physics (IOP), American Institute of Chemical Engineers (AIChE), American Institute of Mechanical Engineers (ASME), National Academy of Inventors, and the California Council of Science and Technology. He is currently the IEEE Electron Devices Society (EDS) Distinguished Lecturer, and was the Distinguished Lecturer on Nanotechnology for both the IEEE Nanotechnology Council and ASME.  He is currently the President-Elect of IEEE-EDS.
    

Abstract
     We have been fabricating nanoscale vacuum tubes over the last three years using entirely and exclusively silicon technology. Vacuum is superior to any semiconductor in terms of electron transport, in addition to being immune to all radiations. We have combined the best of vacuum transport and silicon technology to fabricate surround gate nanoscale vacuum transistors on 8 " wafers with a channel dimension of 50 nm. These vacuum transistors, operating at a drive voltage of only 2 V, which is remarkable for vacuum devices, have the potential for THz electronics and several other applications.

     This talk will also provide an overview of our recent activities in printable electronics including gas sensors, antennas and triboelectric nanogenerators.  To enable a one-step printing without the need for post-deposition thermal treatment, we have developed an atmospheric pressure plasma jet printing technology.  This is an alternative to inkjet printing for depositing conducting, semiconducting, insulating and other materials on a variety of flexible substrates.  The author thanks Jin-Woo Han, Ram Prasad Gandhiraman, Jessica Kohene, Dongil Moon, Myeonglok Seol, Sunjin Kim, Beomseok Kim, and Kyung Jean Yoon.    

담당교수: 전기·정보공학부 홍용택, 이종호 (문의: 민예슬, Tel. 880-5440)